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MICROWAVE SILICON COMPONENTS
Contents
MICROWAVE SILICON COMPONENTS
CONTENTS CONTENTS
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New f it o ogy Spir nol Tech
PAGE
INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4
All specifications contained in that catalog are subject to change without notice.
SCHOTTKY DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-28 TUNING VARACTORS DIODES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-31
POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40 CASE STYLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-47 MOS CAPACITORS: Please consult page 7-39 of this catalog
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12-1 Vol. 1
MICROWAVE SILICON COMPONENTS
Introduction
INTRODUCTION
This part of the Microwave section presents TEMEX product lines including: * *
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receiving diodes control diodes tuning varactors multiplier varactors step recovery diodes high voltage PIN diodes
* * * *
TEMEX products are available in a complete assortment of packages including: * * * * * chips standard surface mount ceramic and plastic non magnetic custom
IN-HOUSE PRODUCTION
The silicon slice is the in-house starting point of TEMEX product manufacturing. From the virgin wafer, TEMEX performs all functions, including: * * * * * * * * epitaxy diffusion photomasking metallization passivation dicing packaging control and burn-in
TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky metallurgies, all junction passivations, and all mesa operations.
12-2 Vol. 1
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MICROWAVE SILICON COMPONENTS
Symbols
SYMBOLS
Cb Cj CT CX/Cy f
www..com FCO
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Case Capacitance Junction Capacitance Total Capacitance Tuning Ratio Test Frequency Cut-off Frequency Frequency Input Intermediate Frequency Output Frequency Operating frequency Forward Continuous Current Reverse Continuous Current Reverse Pulse Current Conversion Loss Not Applicable Single Sideband Noise Figure Noise Figure of Intermediate Frequency Gold Contact Diameter CW Power Capability Power Dissipation Power Input Limiting Threshold Local Oscillator Power Output Power RF Power Figure of Merit Forward Series Resistance Thermal Resistance Video Resistance Minority Carrier Lifetime Reverse Switching Time Junction Temperature Snap-off Time Tangential Sensitivity Breakdown Voltage Forward Continuous Voltage Applicable Voltage (RF + bias) Voltage Standing Wave Ratio Forward Threshold Voltage Threshold Voltage Impedance at Intermediate Frequency Output Impedance
12-3 Vol. 1
FI FIF FO Foper IF IR IRP L N/A NFSSB NFIF PCW Pdiss Pin PL PLO PO PRF Q-X RSF Rth RV TCR Tj tSO TSS VBR VF VR VSWR VT VTO ZIF ZO
I
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SILICON PIN DIODES
Selection guide
SILICON PIN DIODES
Selection Guide
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PAGE
HOW TO SPECIFY A PIN DIODE? SURFACE MOUNT PACKAGE
- PLASTIC PACKAGE SWITCHING SILICON PIN DIODES - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES - SQUARE CERAMIC PIN DIODES - NON MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES
12-5
12-6 12-8 12-10 12-12 12-15
HIGH VOLTAGE PIN DIODES
- SWITCHING & PHASE SHIFTING APPLICATIONS - TWO AND THREE PORTS RF PIN SWITCH MODULES
12-17
12-18 12-20
MICROWAVE APPLICATIONS
- ULTRAFAST SWITCHING SILICON PIN DIODES - FAST SWITCHING SILICON PIN DIODES - ATTENUATOR SILICON PIN DIODES - SILICON LIMITER PIN DIODES
12-22
12-23 12-24 12-25 12-26
12-4 Vol. 1
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SILICON PIN DIODES
How to specify a PIN diode
HOW TO SPECIFY A PIN DIODE ?
To obtain the PIN diodes best suited for a specific application, consider the following:
1. Application www..com * * * 2. 3. switch attenuator limiter
8. Maximum loss expected 9. Minimum isolation needed 10. VSWR and distortion requirements 11. Power applied to the diode * forward biased reverse biased during switching
Frequency and bandwidth requirements Power characteristics * * * peak average pulse duration and duty cycle
* *
12.Static characteristics
4. 5.
Switching time Bias conditions * * forward reverse
* *
applicable voltage: VR total capacitance: CT (in space charge)
* *
forward series resistance: RSF carrier lifetime
l
6. 7.
Circuit impedance Shunt or series assembly
*
thermal resistance: Rth
13. Mechanical and packaging constraints
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12-5 Vol. 1
SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes
PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES
Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. www..com The use of this technology eliminates wire bonding on to the chips. Applications The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF) and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching time and low switching current. TEMEX' diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak power, RF and microwave applications (up to 3 GHz). Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems) and filter switches, phase shifters .... Note: To reduce the distortion, it is necessary to verify and design with the following formula: IHF
l IDC F
<< 1
IHF :
RF peak current (A) Diode minority carrier lifetime (s) DC bias current (A) Application frequency (Hz)
l :
IDC : F :
12-6 Vol. 1
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SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes
Characteristics @ Ta = +25 C PACKAGED DIODES
Breakdown voltage (VBR (1)) Test conditions Type
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Total capacitance (CT (2)) F = 1 MHz VR = 50 V pF max
0.3 (3) 1 (3) 0.35 (4) 0.35 1.2 0.35 1.2 0.6
Series resistance (RSF) IF = 10 mA F = 120 MHz max
2.5 0.5 1.5 3 0.6 3 0.6 2
(5)
Minority carrier lifetime (I) IF = 10 mA IR = 6 mA ns typ.
150 200 200 500 1000 500 1000 2000
IR = 10 A V min.
35 35 50 100 100 200 200 400
DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051
(1) : Other breakdown values on request (2) : Other capacitance values on request (3) : VR = 5 V at F = 1 MHz Temperature ranges: Operating junction (Tj) : Packages SOD323 Packages SOT23 SOT23 -55 C to +125 C Storage :
(4) (5)
: VR = 20 V at F = 1 MHz : RSF at IF = 5 mA
-55 C to +150 C
SOT23
SOT143
DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051
DH50051-60 DH50058-60 DH50053-60 DH50103-60 DH50109-60 DH50203-60 DH50209-60 DH80051-60
DH50051-51 DH50058-51 DH50053-51 DH50103-51 DH50109-51 DH50203-51 DH50209-51 DH80051-51
DH50051-53 DH50058-53 DH50053-53 DH50103-53 DH50109-53 DH50203-53 DH50209-53 DH80051-53
DH50051-54 DH50058-54 DH50053-54 DH50103-54 DH50109-54 DH50203-54 DH50209-54 DH80051-54
DH50051-70 DH50058-70 DH50053-70 DH50103-70 DH50109-70 DH50103-70 DH50209-70 DH80051-70
(1) Other configuration available on request.
How to order? DH50051 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk
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12-7 Vol. 1
SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes
PLASTIC PACKAGE SURFACE MOUNT ATTENUATING SILICON PIN DIODES
Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. www..com The use of this technology eliminates wire bonding on to the chips.
Applications Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from MHz to several GHz. The attenuating Pin diode uses properties of variation of forward series resistance versus the DC forward bias current. In order to obtain the best dynamic range, a single diode attenuator may be used in series or shunt configuration or designed as a multiple diode circuit (T or p circuit), where the device may be matched through the attenuation range. Note: To reduce the distortion, it is necessary to verify and design with the following formula: IHF
l IDC F << 1
IHF : RF peak current (A) Diode minority carrier lifetime (s) DC bias current (A) Application frequency (Hz)
l :
IDC : F :
Typical performance curve
RSF () 1000
Typical series resistance versus forward current
100 10
DH40144 DH40225 DH40141
1 0.1
12-8 Vol. 1
1
IF (mA) 10
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SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes
Electrical characteristics at 25 C Electrical Parameters Test conditions I Zone thickness
(1)
Forward series resistance Rsf () F = 120 MHz IF = 0.1 mA IF = 1 mA IF = 10 mA max 13 7 13
Junction capacitance Cj (2) F = 1 MHz pF typ. 0.05 0.10 0.10 max 0.10 0.30 0.30
Reverse current IR VR = 100 V A max 10 10 10
Carrier lifetime I IF = 10 mA IR = 6 mA s typ. 2.5 5.0 7.0
m
Type
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DH40141 DH40144 DH40225
typ. 140 140 220
min. 400 200 400
max min. max min. 800 50 100 6.5 400 25 50 3.5 800 50 100 6.5
(1) Other I zone thicknesses on request (2) Other capacitance values on request (measured at 50 V) Temperature ranges: Operating junction (Tj) : Storage : - 55 C to + 125 C - 65 C to + 150 C
Packages SOD323 Packages SOT23 SOT143
DH40141 DH40144 DH40225
DH40141-60 DH40144-60 DH40225-60
DH40141-51 DH40144-51 DH40225-51
DH40141-70 DH40144-70 DH40225-70
(1) Other configuration available on request. How to order? DH40141 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 87: SOT323 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk
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12-9 Vol. 1
SILICON PIN DIODES
Low cost square ceramic package PIN diodes
LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
Features * * * * * * Low loss, low distortion Low inductance High reliability Hermetically sealed package Non rolling MELF design Pick and place compatibility Description TEMEX is manufacturing a square PIN diode for surface mount applications. The chip inside is passivated to ensure high reliability and very low leakage current. These diodes ensure high power switching at frequencies from HF to few GHz. This package utilizes ceramic package technology with low inductance and leadless faced package. The design simplifies automatic pick and place indexing and assembly. The termination contacts are tin plated for vapor or reflow circuit board soldering. The active area is a PIN glass passivated chip, which can be designed to customer specifications.
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Pinning SOLDERABLE SURFACES CERAMIC
Outline drawing
A
A
C B
Package
FULL FACE BOND
CHIP
SMD4
SMD6
SMD8
Symbol A B C A B C A B C
Millimeters min. max 2 2.3 2.9 3.5 0.3 0.8 2.5 2.8 4.7 5.2 0.3 0.8 3.50 3.81 4.70 5.2 0.20 0.38
Inches min. max .079 .091 .114 .138 .012 .031 .098 .0110 .185 .205 .012 .031 .138 .150 .185 .205 .008 .015
12-10 Vol. 1
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SILICON PIN DIODES
Low cost square ceramic package PIN diodes
Applications TEMEX square ceramic diodes are particularly suitable for high volume tape and reel assembly. Several values of total capacitance are available, together with a low forward series resistance. These components are designed to meet the low distortion specification required by all the mobile radio applications. Due to the specific design, these devices offer low loss and low thermal resistance performance and are characterized for high power handling. The electrical properties are ideal for use in antenna switches, filters, phase shifters, in all mobile radio applications from few MHz to GHz frequencies.
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Electrical characteristics at 25 C
Electrical Parameter
Package
Applicable voltage V IR < 10 A
Total capacitance CT f = 1 MHz VR = 50 V pF typ. max 0.6 0.7 1.0 1.2 0.9 1.2 1.5 1.7 1.8 2.5 0.6 0.7 1.0 1.2
Forward series resistance RSF f = 120 MHz IF = 50 mA typ. max 0.70 0.90 0.25 0.35 0.50 0.75 0.40 0.60 0.50 0.75 0.7 1.00 0.25 0.35
Test conditions
Minority carrier lifetime I IF = 10 mA IR = 6 mA s min. 1.0 1.0 2.0 3.5 5.0 1.0 1.0
Power dissipation Contact surface (1) W max 3.0 3.0 4.0 4.5 8.0 3 3
Type SQM1050 SQM1150 SQM1250 SQM1350 SQM1450 SQM2050 SQM2150 (1) (2)
Type SMD4 (2) SMD4 SMD4 SMD4 (2) SMD8 SMD4 SMD4
w! Ne
V max 50 200 50 50 50 50 50
diode brazed on infinite copper heat sink at 25 C standard package SMD4 also available in SMD6
Temperature ranges: Operating junction (Tj) Storage Soldering : : : -55 C to +150 C -65 C to +150 C 230 C 5 Sec.
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12-11 Vol. 1
SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES
Description These PIN diodes are manufactured in a square package (SMD) for surface mount applications. These packages utilize ceramic package technology with low inductance and axial terminations. This design simplifies automatic pick and place indexing and assembly. The termination contacts are tin lead plated for vapor or reflow circuit board soldering on Printed Circuit Boards. These www..com diodes are particularly suited for applications in frequency hopping radios, low loss, low distortion, and filters in HF VHF and UHF frequencies. ,
Packages Packages DH50209 DH80050 DH80051 DH80052 DH80053 DH80054 DH80055 DH80082 DH80100 DH80102 DH80106 SMD4 -06 -06 -06 -06 -06 -06 -06 -06 -06 SMD4AM -40 -40 -40 -40 -40 -40 -40 -40 -40 SMD6 SMD8 SMD8AM
-20 -20 -20 -20
-24 -24
-44 -44
Other specifications available on request.
How to order? DH80053 Diode type 06 Package information -06: SMD4 -40: SMD4AM SMD8AM -20: SDM6 -24: SMD8 T3 Conditioning T1: 1000 pieces tape & reel T3: 3000 pieces tape & reel blank: bulk
12-12 Vol. 1
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SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
Electrical characteristics Low voltage PIN diodes Breakdown Vbr (V) Test conditions Type www..com DH50209 Ir = 10 A min. 200 Total capacitance Ct (pF) Vr = 50 V f = 1 MHz typ. max. 1.00 1.20 Forward series resistance Rsf () If = 50 mA f = 120 MHz max. 0.25 Minority carrier t l (s) If = 10 mA Ir = 6 mA min. 2.00
Medium voltage PIN diodes Applicable Breakdown Total capacitance Forward series Minority Max. power voltage V Vbr Ct resistance Rsf carrier dissipation (V) (V) (pF) () l (s) 25 C I < 10 A Ir = 10 A Vr = 50 V I= 100mA I= 200 mA If= 10mA Contact Free f = 1MHz f= 120MHz f= 120 MHz Ir= 6mA surface air max. typ. typ. max. max. min. W (1) W (2) 500 550 0.40 0.45 0.70 0.65 1.1 3.0 1.2 500 550 0.55 0.65 0.60 0.55 1.5 3.5 1.2 500 550 0.85 1.05 0.40 0.35 2.0 4.0 1.2 500 550 1.05 1.20 0.35 0.30 2.5 4.0 1.5 500 550 1.25 1.35 0.30 0.27 3.0 4.5 1.5 500 550 1.45 1.55 0.28 0.25 3.5 4.5 1.5
Test conditions Type DH80050 DH80051 DH80052 DH80053 DH80054 DH80055
(1) Diode brazed on infinite copper heat sink (2) Diode brazed on Epoxy circuit (PCB)
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12-13 Vol. 1
SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
Medium voltage PIN diodes Applicable Breakdown Total capacitance Forward series voltage V Vbr Ct resistance Rsf (V) (V) (pF) () Vr = 50 V I=100mA I=200 mA I < 10 A Ir = 10 A f = 1MHz f=120MHz f=120 MHz max. typ. typ. max. max. 800 850 0.90 1.00 0.40 0.35 1000 1100 0.55 0.65 0.70 0.60 1000 1100 0.85 1.00 0.50 0.35 1000 1100 1.25 2.00 0.35 0.30 Minority Max. power carrier dissipation l (s) 25 C If=10mA Contact Free Ir=6mA surface air min. W (1) W (2) 3.00 TBD TBD 3.00 TBD TBD 4.00 TBD TBD 7.00 TBD TBD
Test conditions Type DH80082 DH80100 www..com DH80102 DH80106
(1) Diode brazed on infinite copper heat sink (2) Diode brazed on Epoxy circuit (PCB) Temperature ranges Operating junction (Tj) Storage : : -55 C to +150 C -65 C to +150 C
Series Resistance vs. Forward Current
RSF ()
100
10
DH80052 DH80050
1
0 0.1 10 100
I (mA) 1000
100
RSF ()
10
DH80053 DH80051
1
0 0.1 10 100
I (mA) 1000
12-14 Vol. 1
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SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes
NON MAGNETIC SQUARE CERAMIC PACKAGE 500 VOLTS PIN DIODES
Features
Description
*
Non magnetic package loss, low distortion
www..com * Low
* * * * * *
Low inductance High reliability Hermetically sealed package Glass passivated PIN diode chip Non rolling MELF design Pick and place compatibility
TEMEX is manufacturing a non magnetic square PIN diode for surface mount applications. The properties of non magnetism prevent interference in the magnetic field of the imaging system. The chip inside is passivated to ensure high reliability and very low leakage. These diodes ensure high power switching at frequencies from 1 MHz to several GHz. This package utilizes ceramic package technology with low inductance and axial terminations. The design simplifies automatic pick and place indexing and assembly. The termination contacts are tin plated for vapor or reflow circuit board soldering. The active area is a PIN high power glass passivated chip which can be designed to customer specifications.
Pinning
Outline drawing
CERAMIC
2.00 (.080 )
+.012 -0
+0.3 -0
2 (.0 .00 +0 80 + -0 .3 .0 -0 12 )
SOLDERABLE SURFACES
3.20 (.126 )
+.012 -.012
+0.3 -0.3
0.635 max (.025 max)
FULL FACE BOND
CHIP
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12-15 Vol. 1
SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes
Applications TEMEX non magnetic SQP diodes are particularly suitable for Magnetic Resonance Imaging applications. The maximum operating breakdown voltage is 550 V. Several values of www..com total capacitance are available (beginning at 0.40 pF), together with a low forward series resistance. These devices are characterized for high power handling, low loss and low distortion (long carrier lifetime design). The electrical properties are ideal for use in RF coils which must produce a homogeneous electromagnetic field in the MRI system for frequencies from a few MHz to over 100 MHz.
Maximum ratings
OPERATING JUNCTION - 55 C + 150 C
STORAGE - 65 C + 150 C
SOLDERING 230 C 5 sec.
Electrical characteristics STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS PACKAGED DIODES
Characteristics at 25 C Applicable Breakdown voltage voltage V Test conditions TYPE IR < 10 A V
max
Total capacitance CT f = 1 MHz VR = 50 V pF
typ. max
Forward series resistance RSF f = 120 MHz IF as below max
IF=100mA IF=200mA
Minority carrier lifetime
Power dissipation
VBR Ir < 10 A V
typ.
I
IF = 10 mA IR = 6 mA s
min.
Contact surface W
max
(1)
DH80050-40 DH80051-40 DH80052-40 DH80053-40 DH80054-40 DH80055-40
(1)
500 500 500 500 500 500
550 550 550 550 550 550
0.40 0.55 0.85 1.05 1.25 1.45
0.45 0.65 1.05 1.20 1.35 1.55
0.70 0.60 0.40 0.35 0.30 0.25
0.65 0.55 0.35 0.30 0.27 0.22
1.1 1.5 2.0 2.5 3.0 3.5
3.0 3.5 4.0 4.0 4.5 4.5
diode brazed on infinite copper heat sink
12-16 Vol. 1
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SILICON PIN DIODES
High voltage PIN diodes
HIGH VOLTAGE PIN DIODES
Applications These devices are most often used to control Radio Frequency (RF) and microwave signals. Typically, high-voltage PIN diodes are found in www..com high power switches and phase shifters. TEMEX high-voltage PIN diode products are designed for very high reliability, high power handling capabilities, high isolation, and low signal distortion, especially in the HF and VHF bands. High-power multithrow switch modules are available for frequencies in the 1 MHz to 1 GHz range. All high-voltage PIN diode products can be configured on chips or in various packages: e.g. series, shunt, flat mount, stud mount, surface mount (SMD) and (on request) non-magnetic.
Characteristics The controlling element of a PIN diode is its Intrinsic (l) layer. The diode itself is a sandwich, i.e. a high resistivity l layer between highly doped layers of P and N materials. With negative bias on the l layer, the PIN diode exhibits very high parallel resistance, e.g. acting as a switch in the OFF position. A positive bias causes the diode to conduct, with very low series resistance. Certain applications impose specific objectives on diode construction (e.g. in the HF and VHF band, low signal distortion can be achieved with high Minority Carrier Lifetime l).
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12-17 Vol. 1
SILICON PIN DIODES
High voltage PIN diodes
SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS (MEDIUM & HIGH POWER)
Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz. These diodes are available in non-magnetic packages. Electrical www..com characteristics CHIP DIODES
Characteristics
at 25C
Chip dimensions
Applicable
Breakvoltage down VR VBR
CHIP AND PACKAGED DIODES Junction Forward series Minority capacitance resistance carrier Cj (1) RSF lifetime
I
Test conditions
N/A mm typ. Gold dia per side 0.13 0.15 0.25 0.27 0.34 0.13 0.27 0.55 0.23 0.30 0.55 0.6 0.6 0.8 0.8 0.9 0.8 0.9 1.4 0.9 0.9 1.4
I < 10A I < 10A V min. 500 500 500 500 500 800 800 800 1000 1000 1000 V typ. 550 550 550 550 550 850 850 850 1100 1100 1100
VR = 50 V f = 1 MHz pF typ. 0.15 0.30 0.60 0.80 1.2 0.15 0.80 1.4 0.30 0.60 1.40 max 0.20 0.40 0.70 0.90 1.3 0.35 0.90 1.7 0.40 0.75 1.70
f = 120 MHz IF
AS SHOWN MAX
IF = 10 mA IR = 6mA S min. 1.1 1.5 2.0 2.5 3.0 2.0 3.0 5.0 3.0 4.0 7.0
TYPE PIN EH80050 EH80051 EH80052 EH80053 EH80055 EH80080 EH80083 EH80086 EH80100 EH80102 EH80106
IF = 100 mA 0.70 0.60 0.40 0.30 0.25 0.80 0.40 0.35 0.70 0.40 0.35 IF = 200 mA 0.60 0.45 0.40 0.30 0.45 0.30 IF = 200 mA 0.60 0.35 0.50 0.35 0.20
IF = 200 mA 0.65 0.55 0.30 0.25 0.22 0.70 0.30 0.28 0.60 0.35 0.30 IF = 300 mA 0.55 0.35 0.30 0.25 0.35 0.25 IF = 300 mA 0.50 0.30 0.40 0.30 0.15
VR = 100V EH80120 EH80124 EH80126 EH80129 EH80154 EH80159 0.25 0.65 0.75 1.25 0.65 1.25 0.9 1.5 H (2) 1.7 H (2) 2.2 1.5 2.2 1200 1200 1200 1200 1500 1500 1300 1300 1300 1300 1600 1600 0.30 1.00 1.40 2.00 1.00 2.00 0.40 1.20 1.70 2.30 1.20 2.30
6.0 10.0 12.0 15.0 10.0 15.0
VR = 200V EH80182 EH80189 EH80204 EH80209 EH80210 (1) (2)
12-18 Vol. 1
0.75 1.4 0.85 1.4 1.5
1.5 2.6 H (2) 1.7 2.6 H (2) 3 H (2)
1800 1800 2000 2000 2000
1900 1900 2100 2100 2100
0.60 2.00 1.00 2.00 3.00
0.80 2.40 1.30 2.40 3.40
12.0 18.0 14.0 18.0 25.0
Other capacitance values available on request Hexagonal chips (between opposite flats)
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SILICON PIN DIODES
High voltage PIN diodes
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PACKAGED DIODES Thermal resistance RTH (4) PDISS = 1 W C/W PIN DH80050 DH80051 DH80052 DH80053 DH80055 DH80080 DH80083 DH80086 DH80100 DH80102 DH80106 Shunt F 27d F 27d F 27d F 27d F 27d F 27d F 27d BH35 F 27d F 27d BH35 Isolated stud BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH300 Flat mounted BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 max 20.0 18.0 15.0 12.0 10.0 18.0 12.0 8.0 15.0 12.0 5.5 Typical operating conditions VSWR < 1.5 Z0 = 50 Chip configuration Frequency 50 30 20 20 10 50 20 10 20 20 10 MHz - 20000 - 15000 - 10000 3000 1000 - 20000 - 10000 500 - 10000 - 3000 500 Power W 50 80 100 100 250 60 80 200 80 100 500
Type
Standard case (3)
DH80120 DH80124 DH80126 DH80129 DH80154 DH80159
F 27d BH35 BH35 BH141 BH141 BH141
BH301 BH300 BH300 BH300 BH300 BH300
BH202 BH200 BH200 BH200 BH200 BH200
15.0 8.0 6.0 4.5 8.0 4.5
10 10 10 5 10 5
-
8000 2000 500 200 2000 200
100 250 500 1000 250 1000
DH80182 DH80189 DH80204 DH80209 DH80210
BH35 BH141 BH141 BH141 BH141
BH300 BH300 BH300 BH300 BH300
BH200 BH200 BH200 BH200 BH200
10 4.5 8.0 4.5 2.5
10 15 10 1.5 1.5
-
50 200 1000 200 50
1000 250 1000 1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Temperature ranges:
Operating junction (Tj): -55 C to +175 C
Storage: -65 C to +200 C
12-19 Vol. 1
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SILICON PIN DIODES
High voltage PIN diodes
TWO & THREE PORT RF PIN SWITCH MODULES
Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
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Electrical characteristics
Characteristics at 25C Test conditions Type (1) Case Switch Type (2)
Frequency range N/A MHz typ.
Loss L f (MHz) If (mA) dB max
Isolation I f (MHz) Vr (V) dB min.
Input power Pin
CW
Suggested bias conditions Forward mA typ. Reverse V typ.
W max
SH90101 SH91101
TO39 TO39
SP2T SP2T
10 - 600 10 - 600
SH90103 SH91103 SH92103 SH93103
BH203 BH203 BH204 BH204
SP2T SP2T SP3T SP3T
20 20 20 20
-
1000 1000 1000 1000
SH91107
BH403a
SP2T
20 - 500
SH90207 SH91207
BH405 BH405
SP2T SP2T
1.5 - 50 1.5 - 50
200 MHz 100 MHz 100 mA 0V 0.35 35 0.35 35 400 MHz 200 MHz 100 mA 0V 0.35 25 0.35 25 0.35 25 0.35 25 100 MHz 200 MHz 200 mA 100 V 0.20 33 10 MHz 10 MHz 200 mA 200 V 0.15 37 0.15 37 (2)
10 10
100 100
50 50
100 100 100 100
200 200 200 200
150 150 150 150
1000
400
600
1000 1000
1000 1000
700 700
(1) Series 90 and 92 : common anode Series 91 and 93 : common cathode Temperature ranges: Operating junction (Tj) : Storage :
12-20 Vol. 1
Custom configurations available on request
- 55 C to + 150 C - 65 C to + 175 C
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SILICON PIN DIODES
High voltage PIN diodes
Internal wiring diagrams
Typical performances INSERTION
LOSS AND ISOLATION
VERSUS FREQUENCY
common anode
common cathode
Insertion loss (dB)
0.9 0.8 0.7
Isolation (dB)
46 44 42
BOTTOM VIEW
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0.6 0.5 0.4 0.3
Isolation
40 38 36 34 32
SH90101
SH91101
0.2 0.1 0 10
Insertion loss
20 30 50 70 100 200
30 28 400 600 f (MHz)
Insertion loss (dB)
0.8 0.7 0.6
Isolation (dB)
52 48 44 40
SH90103
SH91103
0.5 0.4 0.3 0.2 0.1 0 20 30
Isolation
36 32 28
Insertion loss
24 20 f
50 70 100 200 400 700 1000 (MHz)
SH92103
SH93103
Insertion loss (dB) Isolation (dB)
52 48 44 40
0.8 0.7 0.6 0.5 0.4 0.3 0.2
Isolation
36 32
SH91107
Insertion loss
28 24 20 500 f (MHz)
0.1 0 20 30 50 70 100 200 300
Insertion loss (dB)
0.8 0.7 0.6
Isolation (dB)
54 51 48 45
bias
bias bias
bias
0.5 0.4 0.3
Isolation
42 38
SH90207
SH91207
0.2 0.1 0 1
Insertion loss
36 33 30 f (MHz)
2
35
7 10
20
30
50
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12-21 Vol. 1
SILICON PIN DIODES
Microwave applications
MICROWAVE APPLICATIONS
Low and medium voltage PIN diode applications
The most common uses of these devices are: fast switching, attenuation and limiting. They operate at frequencies from a few MHz to 100 GHz.
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In switching applications, e.g. timing digital bit streams, these PIN diodes support signal power levels below 30 W, up to 100 GHz. Thin I layers, from 1 to 50 m, and passivated mesa technology in chip configurations, yield very low junction capacitance (Cj), i.e. below 0.025 pF . As attenuators, e.g. in Automatic Gain Control (AGC) circuits, these PIN diodes are manufactured with a proprietary technology. This technology optimizes the relationship between Cj and RSF (Forward Series Resistance), offering a high Minority Carrier Lifetime l, which minimizes signal distortion. In limiting applications, e.g. passive protection for receivers, these PIN diodes operate as power dependent variable resistors.
12-22 Vol. 1
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SILICON PIN DIODES
Microwave applications
ULTRAFAST SWITCHING SILICON PIN DIODES
Description For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 m). Electrical characteristics CHIP DIODES
at 25C dia O Test conditions
CHIP AND PACKAGED DIODES
Junction voltage capacitance VBR IR = 10 A Cj VR = 6 V f = 1 MHz Series Minority Reverse resistance carrier switching lifetime time RSF
PACKAGED DIODES
Thermal resistance Rth Pdiss 1W F 27 d
Characteristics Gold Breakdown www..com
I
TCR
IF = 10 mA IF = 10 MA IF = 20 mA f = 120 MHz IR = 6 mA VR = 10 V 50
Type Case C2a (1) EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 EH50057 EH50071 EH50072 EH50073 EH50074 EH50075 EH50076 EH50077 EH50101 EH50102 EH50103 EH50104 EH50105 EH50106 EH50107
m typ.
V min. typ.
pF max
max
ns typ.
ns typ.
Type
Standard cases (1) Cb = 0.18 pF
(2)
C/W max
Cb = 0.12 pF
(2)
25 30 35 55 65 30 35 40 50 65 80 35 40 45 50 60 80 100 45 50 60 70 90 110 130
30 30 30 30 30 50 50 50 50 50 50 70 70 70 70 70 70 70 100 100 100 100 100 100 100
0.08 0.12 0.17 0.23 0.40 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.40
0.12 0.17 0.23 0.40 0.60 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.60
1.8 1.5 1.0 0.9 0.7 1.6 1.4 1.1 1.0 0.9 0.7 2.0 1.7 1.6 1.4 1.0 0.9 0.7 1.9 1.7 1.4 1.2 1.0 0.8 0.6
20 20 25 30 40 30 30 35 40 50 60 50 50 60 60 100 100 150 150 150 200 250 300 400 500
2.0 2.0 2.5 3.0 4.0 3.0 3.0 4.0 4.0 5.0 6.0 5.0 5.0 6.0 6.0 10.0 10.0 15.0 15.0 15.0 20.0 25.0 30.0 40.0 50.0
DH50033 DH50034 DH50035 DH50036 DH50037 DH50052 DH50053 DH50054 DH50055 DH50056 DH50057 DH50071 DH50072 DH50073 DH50074 DH50075 DH50076 DH50077 DH50101 DH50102 DH50103 DH50104 DH50105 DH50106 DH50107
F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d
M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208
80 80 70 60 50 80 70 60 50 45 45 70 70 60 50 45 40 40 60 60 55 50 40 35 35
(1) (2)
Custom cases available on request C T = Cj + C b
Temperature ranges: Operating Junction (Tj) : -55 C to +175 C Storage : -65 C to +200 C
12-23 Vol. 1
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SILICON PIN DIODES
Microwave applications
FAST SWITCHING SILICON PIN DIODES
Description For fast switching, these passivated mesa diodes have a medium I layer (< 50 m). Electrical characteristics CHIP DIODES
at 25C dia O Test conditions
E
L CHIP AND PACKAGED IDIODES A ECTR C
L
PACKAGED DIODES
Thermal resistance Rth Pdiss 1W F27 d
www..com Characteristics Gold Breakdown
Junction voltage capacitance VBR Cj VR = 50 V f = 1 MHz
Series Minority Reverse resistance carrier switching lifetime time RSF
I
TCR
IR = 10 A
IF = 10 mA IF = 10 MA IF = 20 mA f = 120 MHz IR = 6 mA VR = 10 V 50
Type Case C2a (1)
EH50151 EH50152 EH50153 EH50154 EH50155 EH50156 EH50157 EH50201 EH50202 EH50203 EH50204 EH50205 EH50206 EH50207 EH50251 EH50252 EH50253 EH50254 EH50255 EH50256 EH50401 EH50402 EH50403 EH50404 EH50405
m typ.
V min. typ.
pF max
max
ns typ.
ns typ.
Type
Standard cases (2) Cb = Cb = 0.18 pF
(2)
C/W max
0.12 pF
(2)
55 60 70 90 110 130 150 60 65 75 100 120 150 170 65 75 100 130 160 180 80 90 120 150 200
150 150 150 150 150 150 150 200 200 200 200 200 200 200 250 250 250 250 250 250 400 400 400 400 400
0.04 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.04 0.06 0.08 0.12 0.17
0.06 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.06 0.08 0.12 0.17 0.23
2.0 1.7 1.5 1.4 1.0 0.8 0.6 2.3 2.1 1.5 1.3 1.0 0.8 0.7 2.4 2.2 2.0 1.4 0.9 0.8 2.5 2.3 2.1 1.8 1.6
200 230 300 500 550 800 950 300 400 500 650 800 950 1050 330 500 900 900 1000 1150 700 800 1000 1500 2000
20 23 30 50 55 80 95 30 40 50 65 80 95 100 33 50 90 90 100 110 70 80 100 150 200
DH50151 DH50152 DH50153 DH50154 DH50155 DH50156 DH50157 DH50201 DH50202 DH50203 DH50204 DH50205 DH50206 DH50207 DH50251 DH50252 DH50253 DH50254 DH50255 DH50256 DH50401 DH50402 DH50403 DH50404 DH50405
F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d
M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 BH142 M208 M208 M208 BH142 BH142
50 50 45 40 35 30 30 45 45 40 35 30 30 25 40 40 35 30 30 25 35 35 30 25 20
(1) Chip presentation C2a, except: C2b for EH50256, EH50404 and EH50405 (2) Custom cases available on request (3) CT = Cj + Cb
12-24 Vol. 1
Temperature ranges: Operating junction (Tj) Storage
: -55 C to +175 C : -65 C to +200 C
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SILICON PIN DIODES
Microwave applications
ATTENUATOR SILICON PIN DIODES
Description The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEMEX uses its proprietary technology, which enables the customer to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness. Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from a few MHz to several GHz.
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characteristics CHIP AND PACKAGED DIODES
I ZONE THICKNESS
(1)
CHIP DIODES
Charact. at 25C Test conditions Type
PACKAGED DIODES
Reverse Minority carrier current lifetime IR VR = 100 V
C O N F I G U R A T I O N
Series resistance RSF F = 120 MHz
Junction capacitance CJ (2) F = 1 MHz VR = 50 V IF = 10 mA pF
I
IF = 10 mA IR = 6 mA s Type
Standard package (3)
m
IF = 0.1 mA
IF = 1 mA
A
EH40073 EH40141 EH40144 EH40225
C4c C4a C4c C4d
typ. 70 140 140 220
min. 70 400 200 400
max 140 800 400 800
min. 8 50 25 50
max 16 100 50 100
min. 1.0 6.5 3.5 6.5
max 2.0 13.0 7.0 13.0
typ. 0.30 0.05 0.10 0.10
max 0.50 0.10 0.30 0.30
max 10 10 10 10
min. 1.5 1.5 4.0 5.5
typ. 2.0 2.5 5.0 7.0
DH40073 DH40141 DH40144 DH40225
F 27d F 27d F 27d F 27d
(1) (2) (3)
Other I zone thicknesses available on request Other capacitance values available on request Custom cases available on request
Temperature ranges: Operating junction (Tj) : -55 C to +175 C Storage : -65 C to +200 C
Typical series resistance vs forward current
1000
RSF ()
100
EH40141 - EH40225 EH40144 EH40073
10
1
0.1
1
10
100
IF (mA)
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12-25 Vol. 1
SILICON PIN DIODES
Microwave applications
SILICON LIMITER PIN DIODES
Description These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceramic packages. They operate as power dependent variable resistances and provide passive receiver protection (low noise amplifiers, mixers, and detectors).
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Electrical characteristics CHIP DIODES GOLD DIA Characteristics at 25C O Breakdown voltage VBR IR = 10 A m typ. EH60033 EH60034 EH60035 EH60036 EH60037 EH60052 EH60053 EH60054 EH60055 EH60056 EH60057 EH60072 EH60074 EH60076 EH60102 EH60104 EH60106 C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a 25 30 35 55 65 30 35 40 50 65 80 40 50 80 50 70 110 min. 25 25 25 25 25 50 50 50 50 50 50 70 70 70 90 90 90 V max 50 50 50 50 50 70 70 70 70 70 70 90 90 90 120 120 120 PACKAGED DIODES Junction capacitance Cj0 VR = 0 V f = 1 MHz pF typ. 0.14 0.20 0.28 0.45 0.70 0.10 0.14 0.20 0.28 0.45 0.70 0.10 0.20 0.45 0.10 0.20 0.45 Junction capacitance Cj-6 (1) VR = 6 V f = 1 MHz pF min. 0.08 0.12 0.17 0.23 0.40 0.06 0.08 0.12 0.17 0.23 0.40 0.06 0.12 0.23 0.06 0.12 0.23 max 0.12 0.17 0.23 0.40 0.60 0.08 0.12 0.17 0.23 0.40 0.60 0.08 0.17 0.40 0.08 0.17 0.40 Minority Series carrier resistance lifetime RSF
I
Test conditions Type Case
IF = 10 mA IF = 10 mA f = 120 MHz IR = 6 mA max 1.8 1.5 1.0 0.9 0.7 1.8 1.4 1.1 1.0 0.9 0.8 1.7 1.4 0.9 1.7 1.2 0.8 ns typ. 20 20 25 30 40 30 30 35 40 50 60 50 60 100 150 250 400
(1)
Other values of capacitance available on request
12-26 Vol. 1
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SILICON PIN DIODES
Microwave applications
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PACKAGED DIODES Characteristics at 25C
NOMINAL MICROWAVE CHARACTERISTICS Insertion loss L f = 2.7 GHz f = 2.7 GHz Pdiss = 1W 1dB f = 2.7 GHz PIN = -10 case F 27d Limiting dBm C/W dBm dBm dB Thermal Threshold resistance PL RTH Leakage power POUT max 80 80 70 60 50 80 70 60 50 45 45 70 50 40 60 50 35 typ. + 10 + 10 + 10 + 10 + 10 + 15 + 15 + 15 + 15 + 15 + 15 + 18 + 18 + 18 + 20 + 20 + 20 typ. + 20 + 20 + 21 + 22 + 23 + 24 + 24 + 25 + 26 + 27 + 28 + 27 + 30 + 32 + 31 + 33 + 35 typ. 0.1 0.1 0.1 0.2 0.2 0.1 0.1 0.1 0.1 0.2 0.2 0.1 0.2 0.2 0.2 0.2 0.3 Peak power PIN 1 s Pulse 1% DC dBm max + 50 + 50 + 52 + 53 + 56 + 52 + 52 + 53 + 54 + 57 + 58 + 54 + 55 + 58 + 56 + 59 + 61 CW power PIN
Test conditions Standard case (2) Cb = 0.18 pF Cb = 0.12 pF (3) (3) F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208
W max 2.0 2.0 2.5 3.0 4.0 2.5 2.5 3.0 3.5 4.0 5.0 3.0 4.0 5.0 3.5 5.0 7.0
Type DH60033 DH60034 DH60035 DH60036 DH60037 DH60052 DH60053 DH60054 DH60055 DH60056 DH60057 DH60072 DH60074 DH60076 DH60102 DH60104 DH60106
(2) (3)
Other capacitance values available on request CT = Cj +Cb
Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -65 C to +200 C
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12-27 Vol. 1
SILICON SCHOTTKY DIODES
Selection guide
SILICON SCHOTTKY DIODES
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Selection Guide
PAGE SCHOTTKY BARRIER DETECTOR DIODES SCHOTTKY BARRIER MIXER DIODES 12-29 12-30
12-28 Vol. 1
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SILICON SCHOTTKY DIODES
Silicon Schottky barrier detector diodes
SILICON SCHOTTKY BARRIER DETECTOR DIODES
Description Silicon Schottky barrier detector diodes are available as: * packaged diodes
* chip www..com They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.
Electrical characteristics packaged diodes Frequency Tangential sensitivity range Foper Tss N/A GHz min. DH340 F51 2 - 12 12 - 18 - 54 - 51 min. 1 max 2 max 250 max 50 typ. 3 Video resistance RV RF power PRF CW mW Forward continuous Breakdown voltage currenT VBR IF N/A mA IR = 10 A V
Characteristics at 25C Test conditions TYPE CASE (1)
Video bandwidth = 1 MHz IF = 30 A dBm k
(1)
Custom cases available on request
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
* * *
T = + 25 C IF = 30 A Video bandwidth = 1 MHz
Typical tangential sensitivity vs frequency
TSS (dBm) -56
-54
-52 -51 1
2
5
10
20 f (GHz)
12-29 Vol. 1
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SILICON SCHOTTKY DIODES
Silicon Schottky barrier mixer diodes
SILICON SCHOTTKY BARRIER MIXER DIODES
Description
Silicon Schottky barrier mixer diodes are available in the following configurations: * * packaged chip
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Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between - 10 dBm and + 10 dBm. Medium barrier diodes are required for applications where the LO drive level is between - 5 dBm and + 15 dBm. The use of a passivated planar construction contributes to high reliability.
Electrical characteristics packaged diodes Frequency SSB Noise range figure Foper NFSSB N/A GHz 1-6 1-6 1-6 6 - 12 6 - 12 6 - 12 6 - 12 12 - 18 12 - 18 12 - 18 12 - 18 (1) dB max 6.5 6.0 5.5 7.0 6.5 6.0 5.5 7.5 7.0 6.5 6.0 VSWR (ratio) N/A ratio typ. max 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 2 2 2 2 2 2 2 2 2 2 2 IF Impedance ZIF Breakdown Total voltage capacitance VBR CTO
Characteristics at 25C
Test pulse energy
Test conditions Type DH301 DH302 DH303 DH312 DH313 DH314 DH315 DH322 DH323 DH324 DH325 Case (2) F51 F51 F51 F51 F51 F51 F51 F51 F51 F51 F51
f = 30 MHZ F = 1 MHZ I = 10 A PLO = 1 mW Pulse = 3 nS R VR = 0 V min. 200 200 200 200 200 200 200 200 200 200 200 max 400 400 400 400 400 400 400 400 400 400 400 Ergs max 5 5 5 5 5 5 5 5 5 5 5 V typ. 3 3 3 3 3 3 3 3 3 3 3 pF typ. 0.40 0.40 0.40 0.25 0.25 0.25 0.25 0.17 0.17 0.17 0.17
RF Power max: 250 mW CW (1) Noise figure measurement conditions: PLO = 1 mW fIF = 30 MHz NFIF = 1.5 dB noise tube: 15.6 dB dc load = 10 test frequencies: 3.0, 9.3 or 15.0 GHz (2)
12-30 Vol. 1
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
Custom cases available on request
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TUNING VARACTOR
Selection guide
TUNING VARACTOR
Selection Guide
PAGE SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR 12-32
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HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
VBR = 30 V VBR = 45 V 12-34 12-35
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
12-36
MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
12-39
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast band receivers.
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12-31 Vol. 1
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel www..com for automated pick and place assembly on surface mount circuit boards. Applications The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device. Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay line, etc. NOTE: Variation of the junction capacitance versus reverse voltage follows this equation: Cj (Vr) = Cj (0 V) 1 + Vr
[
]
Vr : : :
Reverse voltage Built-in potential .7V for Si .5 for abrupt tuning varactor
12-32 Vol. 1
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TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
Electrical characteristics at Ta = +25 C Reverse breakdown voltage, Vb = @10 A: 30 V min. Electrical parameters Test Conditions Type
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Breakdown voltage VBR IR = 10 A V min.
Junction capacitance Cj F = 1 MHz VR = 4 V pF
(1)
Tuning ratio
Figure of merit Q VR = 4 V F = 50 MHz typ. 4300 4100 3900 3400 2200 2600 2200
Cj0V/Cj30V typ. 4.0 4.5 4.6 4.7 4.8 4.9 5.0
DH71010 30 DH71016 30 DH71020 30 DH71030 30 DH71045 30 DH71067 30 DH71100 30 (1) Other tolerance on request Temperature ranges: Operating junction (Tj):
1.0 20% 1.6 20% 2.0 20% 3.0 20% 4.5 20% 6.7 10% 10 10%
-55 C to +125 C
Storage:
-65 C to +150 C
Packages SOD323 Packages SOT23 SOT23 SOT23 SOT143
DH71010 DH71016 DH71020 DH71030 DH71045 DH71067 DH71100
DH71010-60 DH71016-60 DH71020-60 DH71030-60 DH71045-60 DH71067-60 DH71100-60
DH71010-51 DH71016-51 DH71020-51 DH71030-51 DH71045-51 DH71067-51 DH71100-51
DH71010-53 DH71016-53 DH71020-53 DH71030-53 DH71045-53 DH71067-53 DH71100-53
DH71010-54 DH71016-54 DH71020-54 DH71030-54 DH71045-54 DH71067-54 DH71100-54
DH71010-70 DH71016-70 DH71020-70 DH71030-70 DH71045-70 DH71067-70 DH71100-70
(1) Other configuration available on request. How to order? DH71010 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk
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12-33 Vol. 1
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
VBR 30 V
Description This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band. CHIP DIODES
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CHIP AND PACKAGED DIODES VBR (10 A) 30 V Gold dia O junction capacitance Cj VR = 4 V f = 1 MHZ m typ. 50 60 70 80 90 100 110 120 140 150 170 180 200 220 250 270 300 330 350 370 410 450 500 540 590 650 720 800 pF 20 % (2) 0.4 0.6 0.8 1.0 1.2 1.6 2.0 2.5 3.0 3.7 4.5 5.4 10 % (2) 6.7 8.0 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 min. 4500 4500 4400 4300 4200 4100 3900 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1700 1500 1400 1300 1200 950 750 650 500 400 300 Fig. of merit Q VR = 4 V f = 50 MHZ
PACKAGED DIODES (1) Standard cases Other cases Tuning ratio CTO/CT30 CASE CAPACITANCE Cb Type DH71004 DH71006 DH71008 DH71010 DH71012 DH71016 DH71020 DH71025 DH71030 DH71037 DH71045 DH71054 DH71067 DH71080 DH71100 DH71120 DH71150 DH71180 DH71200 DH71220 DH71270 DH71330 DH71390 DH71470 DH71560 DH71680 DH71820 DH71999 Case Cb= 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb= 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d min. 3.0 3.4 3.7 4.0 4.3 4.5 4.6 4.6 4.7 4.7 4.8 4.8 4.9 5.0 5.0 5.1 5.1 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 CASE CAPACITANCE Cb Case Cb= 0.12 pF (3) min. M208 3.3 M208 3.7 M208 4.0 M208 4.3 M208 4.5 M208 4.6 M208 4.7 M208 4.8 M208 4.8 M208 4.8 M208 4.9 M208 4.9 Cb= 0.2 pF (3) BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 4.9 5.0 5.0 5.1 5.1 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 Tuning ratio CTO/CT30
Characteristics at 25C
Test Conditions Type EH71004 EH71006 EH71008 EH71010 EH71012 EH71016 EH71020 EH71025 EH71030 EH71037 EH71045 EH71054 EH71067 EH71080 EH71100 EH71120 EH71150 EH71180 EH71200 EH71220 EH71270 EH71330 EH71390 EH71470 EH71560 EH71680 EH71820 EH71999 Case C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2b C2b C2b C2b C2b C2b C2b C2b C2c C2c C2c C2c C2c C2d C2d
(1) Custom cases available on request (2) Closer capacitance tolerances available on request (3) CT = Cj + Cb
12-34 Vol. 1
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
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TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
VBR 45 V
Description This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to X band. Chip diodes GOLD Characteristics at 25 C DIA O www..com Test conditions Type Case m typ. EH72004 EH72006 EH72008 EH72010 EH72012 EH72016 EH72020 EH72025 EH72030 EH72037 EH72045 EH72054 EH72067 EH72080 EH72100 EH72120 EH72150 EH72180 EH72200 EH72220 EH72270 EH72330 EH72390 EH72470 EH72560 EH72680 EH72820 EH72999
(1) (2) (3)
Chip and packaged diodes VBR (10 A) 45 V Junction
Capacitance
STANDARD CASES
Packaged diodes (1) OTHER CASES Tuning Ratio CTO/CT45 Tuning Ratio CTO/CT45 Case Capacitance Cb Case min. Cb 3.5 3.9 4.2 4.5 4.7 5.0 5.2 5.4 5.5 5.6 5.7 5.8 Cb 5.9 5.9 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 = 0.12 pF (3) M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 = 0.2pF (3) BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 min. 3.7 4.1 4.5 4.7 4.9 5.2 5.5 5.6 5.7 5.7 5.8 5.9 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0
Fig. of
Merit
Cj VR = 4 V f = 1 MHZ pF 20 % (2) 0.4 0.6 0.8 1.0 1.2 1.6 2.0 2.5 3.0 3.7 4.5 5.4 10 % (2) 6.7 8.0 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 10 % (2) 47.0 56.0 68.0 10 % (2) 82.0 100.0
Q VR = 4 V f = 50 MHZ Type min. 3000 2900 2800 2700 2700 2600 2500 2400 2300 2200 2000 1900 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 450 350 250 DH72004 DH72006 DH72008 DH72010 DH72012 DH72016 DH72020 DH72025 DH72030 DH72037 DH72045 DH72054 DH72067 DH72080 DH72100 DH72120 DH72150 DH72180 DH72200 DH72220 DH72270 DH72330 DH72390 DH72470 DH72560 DH72680 DH72820 DH72999 Case Capacitance Cb Case Cb = 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb =0.18pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb = 0.18 pF (3) BH28 BH28 BH28 Cb = 0.4 pF (3) BH141 BH141
C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2b C2b C2b C2b C2b C2b C2b C2c C2c C2c C2c C2d C2d C2d C2g C2g
60 80 90 110 110 120 140 150 170 190 210 230 250 280 310 340 380 420 440 470 520 570 620 680 740 820 900 1000
Custom cases available on request Closer capacitance tolerances available on request CT = Cj + Cb
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
12-35 Vol. 1
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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT TUNING VARACTOR
Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Application www..com The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance). Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay lines...
20 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25 C Reverse breakdown voltage, Vb = 20 V min. @ 10 A Reverse Current, Ir = 200 nA @ 16 V Total capacitance (pF) Ct f = 1 MHz f=1 MHz Vr = 4 V Vr = 12 V 20 % typ. 1.2 0.6 1.7 0.8 2.4 1.1 3.5 1.6 4.9 2.2 7.0 3.1 10.0 4.5 15.0 6.6 Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -55 C to +150 C Tuning ratio Ct1V/Ct12V Ct1V/Ct20V f = 1 MHz f = 1 MHz typ. typ. 4.1 4.9 4.4 5.4 4.7 5.8 4.9 6.1 5.0 6.4 5.1 6.5 5.2 6.7 5.2 6.8
Test conditions Type DH76010 DH76015 DH76022 DH76033 DH76047 DH76068 DH76100 DH76150
f = 1 MHz Vr = 1 V typ 2.5 3.6 5.2 8.0 11.0 16.0 23.0 35.0
f = 1 MHz Vr = 20 V typ. 0.5 0.7 0.9 1.3 1.7 2.4 3.5 5.1
12 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25 C Reverse breakdown voltage, Vb = 12 V min. @ 10 A Reverse Current, Ir = 200 nA @ 8 V Total capacitance (pF) Ct f = 1 MHz f=1 MHz Vr = 2.5 V Vr = 4 V 20 % typ. 3.5 4.9 7.0 10.0 15.0 1.9 2.7 3.8 5.5 8.1 Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -55 C to +150 C Tuning ratio Ct1V/Ct2.5V Ct1V/Ct4V f = 1 MHz f = 1 MHz typ. typ. 1.7 1.7 1.7 1.7 1.8 3.1 3.2 3.2 3.2 3.3
Test conditions Type DH77033 DH77047 DH77068 DH77100 DH77150
12-36 Vol. 1
f = 1 MHz Vr = 1 V typ 6.0 8.5 12.0 18.0 27.0
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TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Typical junction capacitance versus reverse voltage
Profils in Cj
100.00
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10.00
76010 76015 76022 76033 76047 76068 76100 76150
10 100
Cj (pF)
1.00 0.01 0.1
0.10 VR (V)
100
Cj (pF)
10
DH77033 DH77047 DH77068 DH77100 DH77150
0.1
1 1 V (V) 10
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12-37 Vol. 1
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Packages SOD323 Packages SOT23 SOT23 SOT23 SOT143
DH76010 DH76015 DH76022 DH76033 www..com DH76047 DH76068 DH76100 DH76150 DH77033 DH77047 DH77068 DH77100 DH77150
DH76010-60 DH76015-60 DH76022-60 DH76033-60 DH76047-60 DH76068-60 DH76100-60 DH76150-60 DH77033-60 DH77047-60 DH77068-60 DH77100-60 DH77150-60
DH76010-51 DH76015-51 DH76022-51 DH76033-51 DH76047-51 DH76068-51 DH76100-51 DH76150-51 DH77033-51 DH77047-51 DH77068-51 DH77100-51 DH77150-51
DH76010-53 DH76015-53 DH76022-53 DH76033-53 DH76047-53 DH76068-53 DH76100-53 DH76150-53 DH77033-53 DH77047-53 DH77068-53 DH77100-53 DH77150-53
DH76010-54 DH76015-54 DH76022-54 DH76033-54 DH76047-54 DH76068-54 DH76100-54 DH76150-54 DH77033-54 DH77047-54 DH77068-54 DH77100-54 DH77150-54
DH76010-70 DH76015-70 DH76022-70 DH76033-70 DH76047-70 DH76068-70 DH76100-70 DH76150-70 DH77033-70 DH77047-70 DH77068-70 DH77100-70 DH77150-70
(1) Other configuration available on request. How to order? DH76150 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk
12-38 Vol. 1
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TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from VHF up to Ku band. Characteristics @ Ta = +25 C
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Reverse breakdown voltage, Vb = @ 10 A: 20 V min. Reverse current, Ir @ 16 V: 200 nA Figure of Total capacitance (pF) merit (Q) Ct f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V typ. typ. 20% typ. typ. 2200 2.5 1.2 0.6 0.5 2000 3.6 1.7 0.8 0.7 1700 5.2 2.4 1.1 0.9 1400 7.7 3.5 1.6 1.3 1000 11 4.9 2.2 1.7 700 16 6.9 3.0 2.4 400 23 10.2 4.5 3.5 140 34 15.2 6.6 5.1 Tuning ratio Ct1V/Ct12V Ct1V/CT20V f = 1 MHz f = 1 MHz typ. typ. 4.1 4.9 4.4 5.4 4.7 5.8 4.9 6.1 5.0 6.4 5.1 6.5 5.2 6.7 5.2 6.8
Test conditions Type Case (1) DH76010 F27d DH76015 F27d DH76022 F27d DH76033 F27d DH76047 F27d DH76068 F27d DH76100 F27d DH76150 F27d (1)
Chip EH76010 EH76015 EH76022 EH76033 EH76047 EH76068 EH76100 EH76150
Custom cases available on request
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +150 C
Typical junction capacitance reverse voltage
Profils in Cj
100.00
10.00
76010 76015 76022 76033 76047 76068 76100 76150
10 100
Cj (pF)
1.00 0.01 0.1
0.10 VR (V)
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12-39 Vol. 1
POWER GENERATION DIODES
Selection guide
POWER GENERATION DIODES
Selection Guide
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PAGE STEP RECOVERY DIODES
STANDARD SURFACE MOUNT PLASTIC PACKAGES 12-42 12-43
SILICON MULTIPLIER VARACTORS
12-45
12-40 Vol. 1
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POWER GENERATION DIODES
Step recovery diodes and multiplier varactor applications
STEP RECOVERY DIODES AND MULTIPLIER VARACTOR APPLICATIONS
A Step Recovery Diode (SRD) generates pulses that can be used to multiply frequencies, and to set up reference points, e.g. for synchronizing test instruments. This device operates by alternately producing and consuming a charge, based on the frequency of its input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias, the SRD maintains conduction by consuming its charge. When the charge has been fully consumed, the www..com SRD snaps off, i.e. very quickly reverts to zero conduction. This device acts as a switch, controlling current flow by alternately storing and releasing its charge, forming pulses at a repetition rate equal to the frequency of its input. The output of a step recovery diode is most often used in two ways: * * a pulse train can be applied to resonant circuits, which provides output power at a frequency above that of the original input, a pulse train can be used to develop a series of frequencies at multiples of the original input frequencies.
Typical applications of step recovery diodes include oscillators, power transmitters and drivers, for telecommunications, telemetry, radar and test equipment. In choosing a SRD, the significant characteristics include: Output Frequency (fo) ; Breakdown Voltage (VBR) ; Junction Capacitance (Cj) ; Minority Carrier Lifetime (l); Snap-off Time (tso) ; Thermal Resistance (Rth) and Output Power (Po).
Multiplier varactors A multiplier varactor is a physical stack of series-connected SRD units. This configuration is capable of multiplying power. Packages for multiplier varactors are designed to dissipate the power yield Power out Power in
(
(
Most of these packages hold from 2 to 4 chips, this type of components are available on customer request.
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12-41 Vol. 1
POWER GENERATION DIODES
Step recovery diodes (SRD)
STEP RECOVERY DIODES (S.R.D.)
Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: *
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very short pulse generation, ultra fast waveform shaping, comb generation, high order multiplication, at moderate power ratings.
* * *
Chip diodes Chip and packaged diodes Gold Breakdown Junction Min. car. Snap-Off Characteristics dia voltage capacitance lifetime time at 25C tI tso Vbr Cj Vr =6 V If =10mA If = 10 mA Test conditions N/A Ir = 10 A f = 1 MHz Ir = 6 mA Vr = 10 V Type Case m typ. EH541 EH542 EH543 EH544 EH545 EH546 (1) (2) C2a C2a C2a C2a C2a C2a 160 220 110 140 55 40 V min. 30 50 30 50 25 15 pF max 1.5 1.5 1.0 1.0 0.4 0.3 ns min. 25 40 20 35 10 6 ps typ. max 90 150 90 150 75 60 140 250 140 250 100 80 DH541 DH542 DH543 DH544 DH545 DH546 Type
Packaged diodes Thermal resistance Rth Pdiss = 1 W in F 27d Case (1) Cb =0.1pF (2) A22e A22e A22e A22e A22e A22e C/W max 30 25 40 35 70 100 Other cases (1) Cb =0.18pF Cb =0.12pF (2) (2) F27d M208 F27d M208 F27d M208 F27d M208 F27d M208 F27d M208
Custom cases available on request CT = Cj + Cb
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
12-42 Vol. 1
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POWER GENERATION DIODES
Plastic package Surface Mount step recovery diodes
PLASTIC PACKAGE SURFACE MOUNT S.R.D.
Description Our SRD diodes are also available in plastic package. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Application
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The DH54X series support fast switching and multiplier applications: * * * * very short pulse generation ultra fast waveform shaping comb generation high order multiplication at moderate power ratings.
Temperature ranges Operating junction (Tj) : -55C to +125C Breakdown Vbr (V) Test conditions Type DH541 DH542 DH543 DH544 DH545 DH546 Packages SOD323 Packages SOT23 SOT23 SOT23 SOT143 Ir = 10 A min. 30 50 30 50 25 15 Junction capacitance Cj (pF) Vr = 6 V f = 1 MHz max. 1.5 1.5 1.0 1.0 0.4 0.3 Storage : -55 C to +150 C Minority carrier lifetime t l (ns) If = 10 mA Ir = 6 mA min. 25 40 20 35 10 6 Snapp-Off time tso (ps) If = 10 mA Vr = 10 V typ. max. 90 140 150 250 90 140 150 250 75 100 60 80
DH541 DH542 DH543 DH544 DH545 DH546
DH541-60 DH542-60 DH543-60 DH544-60 DH545-60 DH546-60
DH541-51 DH542-51 DH543-51 DH544-51 DH545-51 DH546-51
DH541-53 DH542-53 DH543-53 DH544-53 DH545-53 DH546-53
DH541-54 DH542-54 DH543-54 DH544-54 DH545-54 DH546-54
DH541-70 DH542-70 DH543-70 DH544-70 DH545-70 DH546-70
(1) Other configuration available on request.
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12-43 Vol. 1
POWER GENERATION DIODES
Plastic package Surface Mount step recovery diodes
How to order? DH541 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk
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12-44 Vol. 1
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POWER GENERATION DIODES
Silicon multiplier varactor
SILICON MULTIPLIER VARACTORS
Description
These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.
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Packaged diodes
Characteristics at 25C Varactor chips Test per Conditions package Type DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 Case M208b BH142b S268-W1 F27d F60d F27d F27d F27d F27d 1 1 1 1 1 1 1 1 1 Output freq. Fo N/A GHz 0.2 - 2 0.5 - 2 2-3 2-4 3-6 2-8 5 - 12 8 - 16 10 - 25 Breakdown voltage Vbr IR = 10 A V min. 45 90 80 60 50 40 30 20 15 max 70 140 110 90 70 60 45 35 25 Junction Min. car. capacitance lifetime Cj I VR = 6 V f = 1 MHz pF min. max 4.0 5.5 4.0 3.0 2.0 0.9 0.5 0.2 0.2 7.0 7.0 5.5 4.0 3.0 2.0 1.1 0.5 0.3 Snap-Off Thermal time resistance tso Rth IF = 10 mA IF = 10 mA N/A IR = 6 mA VR = 10 V ns min. 125 250 160 100 60 35 20 10 6 ps max 400 1000 700 400 250 200 120 75 60 C/W max 300 8 10 25 30 50 60 70 100 Power output Po fo = (n)fi W typ. 0.5 20.0 15.0 9.0 6.0 3.0 2.0 0.6 0.2
(n) 2 2 2 2 2 2 2 2 2
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
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12-45 Vol. 1
MICROWAVE SILICON COMPONENTS
Case styles
CASE STYLES
GENERAL PURPOSE
PAGE
SURFACE MOUNT DEVICES
PAGE
STRIP LINE / MICRO STRIP
PAGE
A22e BH28
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.....................12-48 .....................12-48 .....................12-48 .....................12-48 .....................12-49 .....................12-49 .....................12-49 .....................12-49 .....................12-49 .....................12-49 .....................12-51 .....................12-51 .....................12-51 .....................12-54 .....................12-54 .....................12-54 .....................12-54 .....................12-55 .....................12-55 .....................12-55 .....................12-55 .....................12-55 .....................12-55 .....................12-55 .....................12-55 .....................12-56
SMD3 SMD4 SMD6 SMD8 SOD323 SOT23 SOT143 SOT323
......................12-56 ......................12-56 ......................12-56 ......................12-56 ......................12-56 ......................12-56 ......................12-57 ......................12-57 POWER
PAGE
BH15 BH16 BH101 BH143 BH151 BH152 BH153 BH154 BH155 BMH76
.....................12-48 .....................12-48 .....................12-49 .....................12-50 .....................12-50 .....................12-50 .....................12-50 .....................12-50 .....................12-50 .....................12-53
BH32 BH35
BH142a BH142b BH142c BH142d BH142e BH142f BH167 BH167s BH198 F27d F30 F51 F54 F54s F60 F60d M208a M208b M208c M208d M208e M208f
BH141 BH158
......................12-49 ......................12-51
BH158am ......................12-51 BH200a BH202 BH203a BH203b BH203c BH204 BH300 BH301 BH303 BH403a BH405 ......................12-52 ......................12-52 ......................12-52 ......................12-52 ......................12-52 ......................12-52 ......................12-53 ......................12-53 ......................12-53 ......................12-53 ......................12-53 C2 C4 .....................12-54 .....................12-54 CHIP vERSION
PAGE
S268/W1 .....................12-56 TO39 W2 .....................12-57 .....................12-57
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12-47 Vol. 1
MICROWAVE SILICON COMPONENTS
Case styles
A22e
Cb=0.1pF
E
1.7
2.1 .067 DIA .083 DIA
D 0.35 0.41 .014 DIA .016 DIA C 25.4 25.4 4 4.4 max 1
BH15
E
Cb=0.1pF
E D C
0.09 0.28 3.82 0.15 1.17
0.11 0.48 4.58 0.35 1.37 max
.0035 .011 .15 .006 .046 min.
.0043 .019 .18 .014 .054 max
B
D
E
B A
1 .157 min. .173 max
A C
B A
SYM min.
C A B
SYM min.
BOL MILLIMETERS
INCHES
D
BOL MILLIMETERS
INCHES
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BH16
Cb=0.16pF
E D C
0.08 0.45 4.58 0.66 2.4
0.12 0.55 5.58 0.86 2.6 max
.003 .018 .180 .026 .094 min.
.005 .022 .220 .034 .102 max
BH28
Cb=0.2pF
A
C
2.04
2.50
.080
.098
B 1.93 2.13 .076 DIA .084 DIA A 3.00 3.20 .118 DIA .126 DIA SYM min. max min. max
B
E
B A
C
D
SYM min.
BOL MILLIMETERS
C
INCHES
BOL MILLIMETERS
INCHES
A
B
Cb=0.2pF BH32
C
A
Cb=0.25pF BH35
3.5 3.9 .138 .154
C D G B
H G F E
5.14 1.37 1.78 1.37
5.93 1.77 1.98 1.77
.202 .054 .070 .054
.233 .070 .078 .070
B 3.86 4.26 .152 DIA .168 DIA A 5.64 6.04 .222 DIA .238 DIA SYM min. max min. max
D 1.52 1.62 .060 DIA .064 DIA C 3.96 4.16 .156 DIA .164 DIA B 3.05 3.25 .120 DIA .128 DIA
BOL MILLIMETERS
C
INCHES
H F E
A 1.52 1.62 .060 DIA .064 DIA SYM min. max min. max
BOL MILLIMETERS
B
INCHES
A
12-48 Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
MICROWAVE SILICON COMPONENTS
Case styles
BH101
B
Cb=0.15pF
E D C
0.05 0.55 5 0.28 2.3
0.15 0.65
.002 .022 .197
.006 .026
BH141
Cb=0.4pF
A F
F E D 4.70 12.8
0.70 5.10 13.4 .185 .504
.028 .201 .526
E
B
A D C
0.48 2.7 max
.011 .091 min.
.019 .106 max
D E
C
6. 40 UNF-3A
A
B 5.20 5.40 .205 DIA .203 DIA A 6.50 6.70 .256 DIA .263 DIA SYM min. max min. max
SYM min.
A
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
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C B
Cb=0.2pF BH142a
D B D A
G F E D C B
0.1 0.06 0.55 2.5 2.10 1.24
0.5 0.10 0.65
.004 .0024 .022 .098
.020 .0039 .026
Cb=0.2pF BH142b
B
C
2.70 1.58
.083 .049
.106 .062
A
B
1.24
1.58
.049
.062
A 1.90 2.20 .075 DIA .087 DIA SYM min. max min. max
F
G
E
A 1.90 2.20 .075 DIA .087 DIA SYM min. max min. max
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
BH142c
B
Cb=0.2pF
A
E D C B
0.06 0.55 5 1.24
0.10 0.65
.0024 .022 .197
.0039 .026
BH142d
E
Cb=0.2pF
A
E D C
0.06 0.55 5 1.24
0.10 0.65
.0024 .022 .197
.0039 .026
1.58
.049
.062
B
1.58
.049
.062
A 1.90 2.20 .075 DIA .087 DIA
C E D
A 1.90 2.20 .075 DIA .087 DIA
C
E
SYM min.
max
min.
max
D
SYM min.
max
min.
max
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
BH142e
Cb=0.2pF
E D C
0.06 0.55 5 1.24
0.10 0.65
.0024 .022 .197
.0019 .026
BH142f
Cb=0.2pF
E D C
0.06 0.55 10 1.24
0.10 0.65
.0024 .022 .394
.0039 .026
B
A
C
B
1.58
.049
.062
A
B
B
1.58
.049
.062
A 1.90 2.20 .075 DIA .087 DIA SYM min.
E D C
C
A 1.90 2.20 .075 DIA .087 DIA SYM min. max min. max
max
min.
max
D E
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
12-49 Vol. 1
MICROWAVE SILICON COMPONENTS
Case styles
BH143
C
Cb=0.1pF
E D C
0.08 0.45 7.60 0.45
0.12 0.55
.003 .094 .299
.005 .102
Cb=0.25pF BH151
E 0.08 0.35 3.70 0.20 1.17 0.12 0.45 4.30 0.30 1.37 max .003 .014 .147 .008 .046 min. .005 .018 .169 .012 .054 max D
E B
E
B
0.55
.018 .094 min.
.022 .102 max
A 2.40 2.60
B A
C B A
SYM min.
D
max
BOL MILLIMETERS
INCHES
D A
SYM min.
BOL MILLIMETERS
C
INCHES
www..com
BH152
E
Cb=0.05pF
E D C
0.08 0.35 3.70 0.20 1.17
0.12 0.45 4.30 0.30 1.37 max
.003 .014 .147 .008 .046 min.
.005 .018 .169
BH153
Cb=0.13pF
E D 0.08 0.45 6.15 0.91 1.68 0.12 0.55 6.55 1.01 1.88 max .003 .018 .242 .036 .066 min. .005 .022 .258 .040 .074 max
B
E
B C C
B A
.012 .054 max
C B A
A
SYM min.
D A
BOL MILLIMETERS
C
INCHES
SYM min.
D
BOL MILLIMETERS
INCHES
BH154
Cb=0.13pF
E D C
0.08 0.45 6.15 0.91 1.68
0.12 0.55 6.55 1.01 1.88 max
.003 .018 .242 .036 .066 min.
.005 .022 .258 .040 .074 max
BH155
Cb=0.13pF
E D C B 0.08 0.45 6.15 0.91 1.68 0.12 0.55 6.55 1.01 1.88 max .003 .018 .242 .036 .066 min. .005 .022 .258 .040 .074 max
E
C C
B
B A
A
E
C C
B
SYM min.
A
D
BOL MILLIMETERS
INCHES
A D
SYM min.
BOL MILLIMETERS
INCHES
12-50 Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
MICROWAVE SILICON COMPONENTS
Case styles
Cb=0.4pF BH158
A
Cb=0.4pF
D 4.00 4.50 .157 .177
BH158am
A
D C B A
4.1 5.2 4.7 5.7
4.4
.16
.173
C 5.10 5.50 .200 DIA .216 DIA B 4.90 5.30 .193 .209
5.5 .204 DIA .216 DIA 5.2 .185 .205
A 6.50 6.70 .256 DIA .264 DIA SYM min.
B D
6.1 .224 DIA .240 DIA max min. max
max
min.
max
B D
SYM min.
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
C
C
www..com
Cb=0.12pF BH167
A E
G F E D C B A
1.86 0.71
2.06 0.81
.073 .028
.081 .032
BH167s
A
Cb=0.12pF
F E
0.71
0.81
.028
.032
0.61 0.66 .024 DIA .026 DIA 1.55 1.75 .061 .069
0.61 0.66 .024 DIA .026 DIA 1.55 1.75 .060 .070
D C B
1.22 1.32 .048 DIA .052 DIA 1.86 2.06 .073 .081
1.22 1.32 .048 DIA 052 DIA 2.57 2.87 .101 .113
1.42 1.62 .056 DIA .064 DIA max min. max
D F E C
B
A
1.42 1.62 .056 DIA .064 DIA max min. max
SYM min.
B D F E C G
SYM min.
BOL MILLIMETER
INCHES
BOL MILLIMETERS
INCHES
BH198
Cb=0.6pF
4 (.157) 2 (.079) Cathod 0.1 (.004)
L D1
4 1.55 1.68 0.07 0.4 0.92 0.86 0.66 1.75 1.88 0.15 0.6 1.12 1.25 0.86 max
.157 .06 .066 .003 .016 .036 .034 .026 min. .069 .074 .006 .024 .044 .049 .034 max
0.5 (.020)
2 (.079)
D
4 (.079)
Anode in 1.70 (.070)
C B2 B1
Cathod 1.25 (.049)max
A1 A
1.02 (.040)
SYM min.
Dimensions in mm (inches) Tg : 0.1 (.004)
BOL MILLIMETER
INCHES
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
12-51 Vol. 1
MICROWAVE SILICON COMPONENTS
Case styles
Cb=0.4pF BH200a
A E C
L K I H G F
43 5.49 6.30 18.26 24.64 0.10 6.78 3.86 2.50
47 5.89 6.40 18.67 24.89 0.127 7.19 4.27 2.667 max
43 .216 .248 .719 .970 .004 .267 .152 .098 min.
47 .232 .252 .735 .980 .005 .283 .168 .105
G J B E K C D A
Cb=0.15pF BH202
M L J I H
43 4.12
47 4.52
43 .162
47 .178
J 30.48 31.50 1.200 DIA 1.240 DIA
K 12.14 12.24 .478 DIA .482 DIA 3.10 3.25 .122 DIA .128 DIA 1.25 16.30 6.30 0.23 2.50 18.26 24.64 6.78 1.29 16.70 6.40 0.27 2..67 18.67 24.89 7.19 max .049 .642 .248 .009 .098 .719 .970 .267 min. .051 .658 .252 .011 .105 .735 .980 .283 max
B G H
3.10 3.25 .122 DIA .128 DIA
F L
G F E D C B A
D
E D C B
I
J
I
www..com K
L F L
A 12.50 12.90 .492 DIA .508 DIA SYM min. max
H M M
9.4 9.64 .370 DIA .380 DIA
BOL MILLIMETERS
INCHES
SYM min.
BOL MILLIMETERS
INCHES
BH203a
Cb=0.15pF
M L J
43 4.12
47 4.52
43 .162
47 .178
K 12.14 12.24 .478 DIA .482 DIA 3.10 3.25 .122 DIA .128 DIA 1.25 16.30 6.30 0.23 2.50 18.26 24.64 6.78 1.29 16.70 6.40 0.27 2.67 18.67 24.89 7.19 max .049 .642 .248 .009 .098 .719 .970 .267 min. .051 .658 .252 .011 .105 .735 .980 .283 I H
F L
BH203b
Cb=0.15pF
M L J
43 4.12
47 4.52
43 .162
47 .178
K 12.14 12.24 .478 DIA .482 DIA 3.10 3.25 .122 DIA .128 DIA 1.25 16.30 6.30 0.23 2.50 18.26 24.64 6.78 1.29 16.70 6.40 0.27 2.67 18.67 24.89 7.19 max .049 .642 .248 .009 .098 .719 .970 .267 min. .051 .658 .252 .011 .105 .735 .980 .283 max I
F
D A B E C K J G
D A B E C K J G H
H
L
G F E
G F E D C B A
I
D C B A
M
M
H
9.4 9.64 .370 DIA .380 DIA max
M
M
I
9.4 9.64 .370 DIA .380 DIA
SYM min.
SYM min.
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
Cb=0.15pF BH203c
M L J
43 4.12
47 4.52
43 .162
47 .178
Cb=0.15pF BH204
D A F B E C K J G I L
M L J I H G F E D C B A
43 4.12
47 4.52
43 .162
47 .178
K 12.14 12.24 .478 DIA .482 DIA 3.10 3.25 .122 DIA .128 DIA 1.25 16.30 6.30 0.23 2.50 18.26 24.64 6.78 1.29 16.70 6.40 0.27 2.67 18.67 24.89 7.19 max .049 .642 .248 .009 .098 .719 .970 .267 min. .051 .658 .252 .011 .105 .735 .980 .283 I H
F
K 12.14 12.24 .478 DIA .482 DIA 3.10 3.25 .122 DIA .128 DIA 1.25 16.30 6.30 0.23 2.50 18.26 24.64 6.78 1.29 16.70 6.40 0.27 2.67 18.67 24.89 7.19 max .049 .642 .248 .009 .098 .719 .970 .267 min. .051 .658 .252 .011 .105 .735 .980 .283 max
D A B E C K J G
G
L
F E D C B A
I
M
M
H
9.4 9.64 .370 DIA .380 DIA max
M
M
H
9.4 9.64 .370 DIA .380 DIA
SYM min.
SYM min.
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
12-52 Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
MICROWAVE SILICON COMPONENTS
Case styles
BH300
Cb=0.4pF
I
A
Cb=0.2pF BH301
3.25 5.60 2.97 0.20 20 6.30 13.95 6.5 3.45 6.00 3.38 0.30 6.40 15.05 max .128 .220 .177 .008 .787 .248 .549 min. .136 .236 .133 .012 .252 .593 max
F D G C A
J I H G F E D C B
1.52 2.82 4.42 2.16 0.18 15.67 4.70 9.46
1.62 3.02 4.82 2.56 0.20 16.18 4.80 10.54 max
.060 .111 .174 .85 .007 .617 .185 .372 min.
.064 .119 .190 .101 .008 .637 .189 .415 max
H G F E D C
G
6 - 32 UNC - 3A
E I J H B
4 - 40 UNC - 3A
E H
I
B
B A
F
6.7 .256 DIA .264 DIA
www..com
D
A 3.00 3.20 .118 DIA .126 DIA SYM min.
C
SYM min.
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
BH303
A E
Cb=0.4pF
I H G F E
3.25 5.60 2.97 0.20 20 6.30 13.95 6.5
3.45 6.00 3.38 0.30 6.40 15.05 max
.128 .220 .177 .008 .787 .248 .549 min.
.136 .236
Cb=0.3pF BH403a
N M L J
9.68 2.72 1.57 0.10 1.78 4.39 1.90 25.4
3 10.08 3.12 1.98 0.15 2.03 4.64 2.16 -
.381 .107 .062 .004 .070 .173 .075 1
.120 .397 .123 .078 .006 .080 .183 .085 .508 .765 max
Typical: 45
6 - 32 UNC - 3A .133 .012 .252 .593 max
K 10.46 10.87 .412 DIA .428 DIA I H
C D
I H
F
B
D C B A
A H F J B L
E
K
G
G F E D C A
6.7 .256 DIA .264 DIA
I M G N
D
SYM min.
C
BOL MILLIMETERS
INCHES
10 - 32 UNF 3A 18.67 19.43 max .735 min.
B 12.50 12.90 .492 DIA SYM min.
BOL MILLIMETERS
INCHES
Cb=0.4pF BH405
F I B J C A G H
J I H G F E D C B
0.97 2.49 2.9 22.4 0.20 6.1 9.2 14
1.07 2.59 3.1 22.6 0.30 6.5 9.6 14.2 max
.038 .098 .114 .882 .0079 .240 .362 .551 min.
.042 .102 .122 .890 .0118 .256 .378
K B
Cb=0.15pF BMH76
K J I H G
0.50 0.20 1.95 1.47 5.1 3.18 3.1 4 3.02 10.3
0.70 0.24 2.15 1.67 5.3 3.68 3.3 4.2 3.22 10.5 max
.020 .008 .077 .058 .201 .125 .122 .157 .119 .406 min.
.028 .010 .085 .066 .209 .145 .130 .165 .127 .413 max
J H E D
F D C B A
E 2.36 2.52 .093 DIA .099 DIA
5/16 - 24 UNF - 2A .559 max
A G
I E D G
A 19.6 19.8 .772 DIA .780 DIA SYM min.
D
BOL MILLIMETERS
INCHES
I F C F
SYM min.
BOL MILLIMETERS
INCHES
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
12-53 Vol. 1
MICROWAVE SILICON COMPONENTS
Case styles
C2
O
C2J 1740 C2H 1440 C2G 1140 C2E C2D C2C C2B C2A 940 840 740 540 340
1800 1500 1200 1000 900 800 600 400 max
68.50 56.69 44.88 37.01 33.07 29.13 21.26 13.39 min.
70.87 59.06 47.24 39.37 35.43 31.50 23.62 15.75 max A (")
C4
C4G 1500 C4F 1000 C4E C4D C4C C4B
A A
2500 1500 1000 700 500 400 300 max
59.06 39.37 27.56 19.69 15.75 11.81 7.87 min.
98.43 59.06 39.37 27.56 19.69 15.75 11.81 max A (")
700 500 400 300 200
C4A
CON min.
A A
CON min. FIG
FIG
A (m)
A (m)
www..com
F27d
Cb=0.18pF
H 2.01 2.05 .079 DIA .081 DIA
G F
G 2.95 3.15 .116 DIA .124 DIA F 1.55 1.59 .061 DIA .063 DIA
F30
Cb=0.25pF
D
A
0.4 1.4
0.6 1.6
.016 .055
.024 .063
C
E 1.55 1.59 .061 DIA .063 DIA D 5.15 1.55 1.74 1.55 5.65 1.59 1.82 1.59 max .202 .061 .069 .061 min. .222 .063 .072 .063 max
C D
C
B 1.93 2.13 .076 DIA .084 DIA A 2.94 3.14 .116 DIA .124 DIA SYM min. max min. max
D
H B
C B
A
A
E
BOL MILLIMETERS
B
INCHES
SYM min.
BOL MILLIMETERS
INCHES
F51
C
Cb=0.1pF
D 1.47 1.67 .058 .066 C 1.47 1.67 .058 DIA .066 DIA
D
F54
A D
Cb=0.2pF
F E D C
1.0 0.40
1.2 0.47
.039 .016
.047 .019
B 1.93 2.13 .076 DIA .084 DIA A 4.9 5.3 max .193 min. .209 max
B
0.61 0.66 .024 DIA .029 DIA 1.19 1.35 .047 DIA .053 DIA 1.70 2.00 .067 .079
A
SYM min.
B
E F
BOL MILLIMETERS
D
INCHES
A
2.00 2.16 .079 DIA .085 DIA max min. max
SYM min.
C
BOL MILLIMETER
INCHES
B
12-54 Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
MICROWAVE SILICON COMPONENTS
Case styles
Cb=0.2pF F54s
A
D C
0.36 0.84
0.46 0.94
.014 .073
.018 .047
F60
Cb=0.2pF
A
F E D C
1.51 1.81 3.76
1.63 1.95 4.21
.059 .071 .148
.064 .077 .166
B 1.19 1.35 .047 DIA .053 DIA A 2.00 2.16 .079 DIA .085 DIA
E
1.52 1.62 .060 DIA .064 DIA 1.93 2.13 .076 DIA .084 DIA 2.95 3.15 .116 DIA .124 DIA max min. max
D
SYM min.
C
max
min.
max
D
B A
BOL MILLIMETERS
INCHES
F
SYM min.
C B
B
BOL MILLIMETER
INCHES
www..com
F60d
Cb=0.25pF
A
F E D C
1.52 0.95 2.91
1.64 1.09 3.36
.060 .037 .115
.065 .043 .132
M208a
Cb=0.12pF
G F E
0.1 0.06 0.55 2.5 1.3 0.95
0.4 0.1 0.65
.004 .0024 .022 .100
.015 .004 .026
D
B
D
A
D C
1.52 1.62 .060 DIA .064 DIA 1.93 2.13 .076 DIA .084 DIA 2.95 3.15 .116 DIA .124 DIA max min. max
C G E
1.7 1.35
.052 .037
.068 .053
E
B
D F
B
F
A
A
1,07 1,47 .042 DIA .058 DIA max min. max
SYM min.
C B
SYM min.
BOL MILLIMETER
INCHES
BOL MILLIMETER
INCHES
M208c M208b
B A
Cb=0.12pF
D A
E D
0.06 0.55 5 0.95
0.1 0.65
.0024 .022 .200
.004 .026
Cb=0.12pF
B 0.95 1.35 .037 .053
B
C B
1.35
.037
.053
A 1.07 1.47 .042 DIA .058 DIA SYM min. max min. max
E C
A 1.07 1.47 .042 DIA .058 DIA SYM min. max min. max
BOL MILLIMETERS
INCHES
BOL MILLIMETERS
INCHES
Cb=0.12pF M208d
D A B
M208e
E D C B 0.06 0.55 5 0.95 1.35 0.1 0.65 .0024 .022 .200
C
Cb=0.12pF
E
D E
.004 .026
0.06 0.55 5 0.95
0.1 0.65
.0024 .022 .200
.004 .026
D C
.037
.053
A
B
B
1.35
.037
.053
C
A 1.07 1.47 .042 DIA .058 DIA SYM min.
E
A 1.07 1.47 .042 DIA .058 DIA SYM min. max min. max
max
min.
max
BOL MILLIMETERS
INCHES
C
BOL MILLIMETERS
INCHES
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
12-55 Vol. 1
MICROWAVE SILICON COMPONENTS
Case styles
M208f
E
Cb=0.12pF
F
F
S268/W1
0.06 0.55 5 9.8 0.95 10.2 1.35 0.1 0.65 .0024 .022 .200 .392 .037 .408 .053
C I
Cb=0.2pF
I H G F
0.38 0.64 0.51
0.62 0.88 0.60
.015 .025 .020
.024 .035 .024
.004 .026
B D E
E
B A C
2.44 2.64 .096 DIA .104 DIA 0.21 1.71 0.31 2.00 .008 .067 .012 .079
D C B A
E D C
F A
3 - 48 UNC 2A 5.01 5.46 .197 .215
1.07 1.47 .042 DIA .058 DIA max min. max
B A
D
SYM min.
H
G
2.85 3.25 .112 DIA .128 DIA max min. max
www..com
BOL MILLIMETER
INCHES
SYM min.
BOL MILLIMETER
INCHES
SMD3
A B
Cb=0.11pF
E D C
2.69 3.71 4.4
2.89 3.91 4.6
.106 .146 .173
.114 .154 .181
A
Cb=0.24pF SMD4
E D C B A
Typical 0,2 Typical 1 0.3 2.9 2 0.8 3.5 2.3 max
Typical .008 Typical .039 .012 .114 .079 min. .031 .138 .091 max
B 2.19 2.39 .086 DIA .094 DIA A 2.44 2.64 .096 DIA .104 DIA SYM min.
E
max
min.
max
C
SYM min.
BOL MILLIMETERS
D C
INCHES
B
BOL MILLIMETERS
INCHES
E
D
A
SMD6
Cb=0.24pF
A
E D C B A
Typical 0,20 Typical 1.20 0.3 4.70 2.5 0.8 5.2 2.8 max
Typical .008 Typical .047 .012 .185 .098 min. .031 .205 .110 max
A
SMD8
B C 4.70 0.20 5.2 0.38 max .185 .008 min. .205 .015 max
A
SYM min.
SYM min.
C
BOL MILLIMETERS
B E
INCHES
C B
BOL MILLIMETERS
INCHES
D
SOD323
H
B C
SOT23
1.70 0.20 0.15 0.05 0.30 1.10 1.25 2.50 Typical .0669 .0078 .0059 .0020 .0118 .043 .049 .098
I G A C D F
Cb=0.2pF
K J I
B C
0.1 0.53 0.05 1.07 0.43 1.78 0.43 2.36 1.3 2.84
min. Millimeters
0.13 0.56 0.1 1.14 0.46 2.04 0.45 2.49 1.35 3.02
max Millimeters
0.004 0.021 0.042 0.017 0.070 0.017 0.093 0.051 0.112
min. Inches
0.005 0.022 0.045 0.018 0.080 0.020 0.098 0.053 0.119
max Inches
G F E D
0.002 0.0004
H G F E D
A
H
C B
F D G
0.94 typ.
0.037 typ.
A SYM
H K J
C B A
SYM BOL
E
Typical INCHES
BOL MILLIMETERS
12-56 Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
MICROWAVE SILICON COMPONENTS
Case styles
SOT143
J I H
A G J
SOT323
max 8 0.10 0.12 1.90 0.40 0.80 1.30 1.10 2.60 2.90 Typical .0039 .0047 .0075 .0157 .0315 .051 .043 .102
H G A E B C D F
K J I H G F E D C B
K J I
0.12 0.43 0.1 max. 0.9 0.3 1.3 0.65 0.3 2.1 1.25 1.9 Typical
.0047 .017 .004 max. .035 .012 .051 .026 .012 .0.83 .043 .075 Typical INCHES
G F
H
4
3
E
B D I 1 E 2 F C
D C B A SYM
www..com
.114 Typical INCHES
A SYM
BOL MILLIMETERS
BOL MILLIMETERS
TO39
Cb=0.2pF
I H G F E D
G E F
8.3
8.5 .327 DIA .335 DIA
0.41 0.48 .016 DIA .019 DIA 44 0.71 9.40 12.7 4.98 6.30 5.18 6.40 46 0.81 10.40 44 .028 .370 .500 .196 .248 .204 .252 46 .032 .409
C B A
I H D B A C
9.10 9.30 .358 DIA .366 DIA max min. max
SYM min.
BOL MILLIMETER
INCHES
W2
Cb=0.15pF
H G F
E F H
0.71 0.45
0.81 0.55
.028 .020
.032 .022
3 - 48 UNC - 3A 0.61 0.81 .024 .032
E
D 1.17 1.37 .046 DIA .054 DIA
B D G
C
3.40
3.60
.134
.142
B 2.46 2.66 .097 DIA .105 DIA
C A
A
4.38
4.68 max
.172 min.
.184 max
SYM min.
BOL MILLIMETERS
INCHES
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
12-57 Vol. 1

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